2025-11-10
With the rapid development of 5G networks, cloud services, virtual reality and other businesses, network traffic is growing at an astonishing rate. As a core component of optical communication networks, electro-optic modulators are also facing demands for higher capacity and lower power consumption. Among them, lithium niobate (LiNbO3) has become the mainstream product in the current high-speed electro-optic modulator market due to its natural advantages such as good physical and chemical stability, wide optical transparency window (0.4μm ~ 5μm), and large electro-optic coefficient.
Lithium niobate is of great significance, similar to the position of silicon in microelectronics, and is thus called the "optical silicon" of the photonic era. Lithium niobate is a material that integrates photorefractive effect, nonlinear effect, electro-optic effect, acousto-optic effect, piezoelectric effect and thermoelectric effect, and is a very important optical functional material. It is well-known for its electro-optic effect. Lithium niobate electro-optic modulators can convert electronic data into photonic information and are widely used in today's optical communication systems, serving as the core component for electro-optic conversion.
Lithium niobate modulators are key devices for long-distance communication and have unparalleled advantages. They have very small chirp effect, high modulation bandwidth, good extinction ratio and excellent device stability, making them outstanding among high-speed devices. Therefore, they are widely used in high-speed and high-bandwidth long-distance communication.
Although lithium niobate modulators have played a key role in the transmission modulation of high-speed backbone networks for decades, they have encountered bottlenecks in key parameters for further increasing transmission rates, and they are relatively large in size, which is not conducive to integration. The new generation of thin-film lithium niobate modulator chip technology, through the latest micro-nano processes, has produced thin-film lithium niobate modulators with high performance, low cost, small size, batch production capability, and compatibility with CMOS processes. This technology is a highly competitive solution for future high-speed optical interconnections.
According to the "China Optoelectronic Device Industry Technology Development Roadmap (2018-2022)" issued by the China Electronic Components Industry Association, currently, domestic core optical communication chips and devices still rely heavily on imports, with the domestic production rate of high-end optical communication chips and devices not exceeding 10%. It is required to strive to achieve a market share of lithium niobate modulator chips and devices exceeding 5%-10% by 2020, continuously replace imports, expand market share, and achieve a market share of over 30% by 2022.
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