Hafnium Oxide (HfO₂): High-k Dielectrics For Chips, Optical Coatings, Advanced Ceramic Components
Hafnium oxide (HfO₂) is a white crystalline powder. Pure hafnium oxide exists in three forms: one amorphous and two crystalline states. Amorphous hafnium oxide can be obtained by calcining unstable compounds such as hafnium hydroxide and hafnium oxychloride at temperatures below 400°C. When this hafnium oxide is further heated to 450–480°C, it begins to transform into a monoclinic crystal. Continued heating to 1000–1650°C leads to a gradual increase in lattice constants and the formation of tetrameric hafnium oxide molecules. At 1700–1865°C, it begins to transition into a tetragonal crystal system.
Application Areas
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Product |
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Safety Data |
Technical Data |
| Hafnium Oxide 99.9% | ET-Hf-01 | Hafnium oxide.pdf | Hafnium Oxide HfO2 99.9.pdf |
| Hafnium Oxide 99.99% | ET-Hf-02 | Hafnium Oxide HfO2 99.99.pdf |
| Signal Word | N/A |
| Risk Statements | N/A |
| Hazard Codes | N/A |
| Precautionary Statements | N/A |
| Flash Point | Not applicable |
| Risk Codes | N/A |
| Safety Statements | N/A |
| RTECS Number | N/A |
| Transport Information | NONH |
| WGK Germany | 3 |
Packaging Specifications
About Hafnium Oxide
Hafnium oxide (HfO₂) is a product of zirconium-hafnium separation. Currently, only the United States and France produce hafnium oxide as a byproduct during nuclear-grade zirconium production. China developed the capability to produce nuclear-grade zirconium early on and can produce small amounts of hafnium oxide. However, the product quantity is scarce and the price is high. As the main chemical product of hafnium, it is typically used as an optical coating material. Very small quantities are beginning to be tested in high-efficiency integrated circuits. The application of hafnium oxide in high-end fields remains to be developed.
Hafnium dioxide (HfO₂) is an oxide with a relatively high dielectric constant. As a dielectric material, HfO₂ is considered an ideal material to replace traditional SiO₂ dielectric layers in field-effect transistors due to its high dielectric constant value (~20), large band gap (~5.5eV), and good stability on silicon substrates. When complementary metal-oxide-semiconductor (CMOS) device dimensions fall below 1μm, traditional silicon dioxide gate dielectric technology causes problems such as increased chip heating and polysilicon depletion. As transistor sizes shrink, silicon dioxide dielectrics must become increasingly thinner, but leakage current increases dramatically due to quantum effects as the silicon dioxide dielectric thickness decreases. Therefore, there is an urgent need for a more feasible material to replace silicon dioxide as the gate dielectric. Hafnium dioxide is a ceramic material with a wide band gap and high dielectric constant that has recently attracted significant attention in the industry, particularly in microelectronics, because it may replace silicon dioxide (SiO₂) as the gate insulating layer in metal-oxide-semiconductor field-effect transistors (MOSFETs), the core devices of silicon-based integrated circuits, to address the size limitations of traditional SiO₂/Si structures in current MOSFETs.
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